公开(公告)号：US12073884B2

公开(公告)日：2024-08-27

申请号：US17810067

申请日：2022-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Jong Song ,  Doo Hyun Kim ,  Soon Young Kim ,  Il Han Park

IPC: G11C7/02 ,  G06F3/06 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/10 ,  G06F3/0679 ,  G11C16/0483

Abstract: A storage device includes a storage controller that receives a protecting command before a thermal process is performed in the storage device, and that generates a protecting pattern by programming a protecting voltage in a converged region where threshold voltage distributions of memory cells in the storage device converge after the thermal process is performed on the storage device.