公开(公告)号：US20130157034A1

公开(公告)日：2013-06-20

申请号：US13766876

申请日：2013-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Mook CHOI ,  Byung Hee HONG ,  Jaeyoung CHOI

IPC: C01B31/04 ,  C07C31/20 ,  C07C69/22 ,  C07C47/02 ,  C07C53/128 ,  C07C31/125 ,  C07C49/12

CPC classification number: C01B32/194 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/23 ,  C01B2204/04 ,  C01B2204/32 ,  C07C31/125 ,  C07C31/20 ,  C07C47/02 ,  C07C49/12 ,  C07C53/128 ,  C07C69/22 ,  Y10T428/24479 ,  Y10T428/24802 ,  Y10T428/30

Abstract: A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.

Abstract translation: 用于石墨烯的化学改性的方法包括干蚀刻石墨烯以提供蚀刻的石墨烯; 并在蚀刻的石墨烯的边缘处引入官能团。 还公开了石墨烯，包括蚀刻的边缘部分，蚀刻部分包括官能团。