公开(公告)号：US20190341358A1

公开(公告)日：2019-11-07

申请号：US16252810

申请日：2019-01-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： YANG HEE LEE ,  Jong Hyuk Park ,  Jin Woo Bae ,  Choong Seob Shin ,  Hyo Jin Oh ,  Bo Un Yoon ,  Il Young Yoon ,  Hee Sook Cheon

IPC分类号： H01L23/00 ,  H01L21/3105 ,  H01L21/02

摘要： A method of forming a semiconductor device, includes: forming a design pattern on a substrate, wherein the design pattern protrudes from the substrate; forming a filling layer on the substrate, wherein the filling layer at least partially covers the design pattern; forming a polishing resistance pattern adjacent to the design pattern in the filling layer using a laser irradiation process and/or an ion implantation process; and removing the filling layer using a chemical mechanical polishing (CMP) process to expose the design pattern.