公开(公告)号：US20190341358A1

公开(公告)日：2019-11-07

申请号：US16252810

申请日：2019-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YANG HEE LEE ,  Jong Hyuk Park ,  Jin Woo Bae ,  Choong Seob Shin ,  Hyo Jin Oh ,  Bo Un Yoon ,  Il Young Yoon ,  Hee Sook Cheon

IPC: H01L23/00 ,  H01L21/3105 ,  H01L21/02

Abstract: A method of forming a semiconductor device, includes: forming a design pattern on a substrate, wherein the design pattern protrudes from the substrate; forming a filling layer on the substrate, wherein the filling layer at least partially covers the design pattern; forming a polishing resistance pattern adjacent to the design pattern in the filling layer using a laser irradiation process and/or an ion implantation process; and removing the filling layer using a chemical mechanical polishing (CMP) process to expose the design pattern.

公开(公告)号：US10943908B2

公开(公告)日：2021-03-09

申请号：US16411613

申请日：2019-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Woo Bae ,  Su Young Shin ,  Young Ho Koh ,  Bo Un Yoon ,  Il Young Yoon ,  Yang Hee Lee ,  Hee Sook Cheon

IPC: H01L21/033 ,  H01L27/108 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/285 ,  H01L49/02 ,  H01L21/02

Abstract: A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.

公开(公告)号：US10711160B2

公开(公告)日：2020-07-14

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo Kong ,  Jung Hun Kim ,  Sang Mi Lee ,  Woo In Lee ,  Hee Sook Cheon ,  Sang Kyun Kim ,  Hao Cui ,  Jong Hyuk Park ,  Il Young Yoon

IPC: H01L21/3205 ,  C09G1/02 ,  H01L21/28 ,  H01L21/321 ,  H01L27/108

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.