公开(公告)号：US20210296321A1

公开(公告)日：2021-09-23

申请号：US17202465

申请日：2021-03-16

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： INKYOUNG HEO ,  HYO-SUB KIM ,  SOHYUN PARK ,  TAEJIN PARK ,  SEUNG-HEON LEE ,  YOUN-SEOK CHOI ,  SUNGHEE HAN ,  YOOSANG HWANG

IPC分类号： H01L27/108 ,  H01L23/532 ,  H01L21/768

摘要： A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.