公开(公告)号：US11417559B2

公开(公告)日：2022-08-16

申请号：US17111758

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonga Kim ,  Seonho Lee

IPC: H01L21/683 ,  H01L21/56 ,  H01L23/31

Abstract: To manufacture a semiconductor package, a package intermediate structure having an element area and a dummy area is formed. A carrier substrate including an adhesion layer is formed. The adhesion layer includes a first area with a first adhesion strength and a second area with a second adhesion strength that is different from the first adhesion strength. The package intermediate structure is supported by the carrier substrate so that the element area is adjacent the first area and the dummy area is adjacent the second area. The package intermediate structure is processed while the package intermediate structure is supported by the carrier substrate.

公开(公告)号：US20230154797A1

公开(公告)日：2023-05-18

申请号：US18055357

申请日：2022-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonghyun Yoo ,  Yeonga Kim

IPC: H01L21/782 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L21/782 ,  H01L21/02348 ,  H01L24/02 ,  H01L2224/0231

Abstract: A method of manufacturing a semiconductor device includes forming a light blocking film configured to block first light within a first wavelength band on an edge region of an upper surface of a light-transmitting carrier substrate; forming a photosensitive adhesive layer on the upper surface of the light-transmitting carrier substrate to at least partially cover the light blocking film; bonding a product substrate to the upper surface of the light-transmitting carrier substrate using the photosensitive adhesive layer; partially curing the photosensitive adhesive layer by irradiating the light through the light-transmitting carrier substrate, wherein a portion of the photosensitive adhesive layer overlapping the light blocking film is not cured; processing the product substrate to form a plurality of semiconductor devices after the partially curing of the photosensitive adhesive layer; and cutting the product substrate such that the plurality of semiconductor devices are cut into a plurality of separate individual semiconductor devices.