公开(公告)号：US10096632B2

公开(公告)日：2018-10-09

申请号：US15425570

申请日：2017-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Sun Oh ,  Yi Tae Kim ,  Jung Chak Ahn

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.

公开(公告)号：US09608024B2

公开(公告)日：2017-03-28

申请号：US14872691

申请日：2015-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Wook Lee ,  Yi Tae Kim ,  Jong Eun Park ,  Jung Chak Ahn ,  Kyung Ho Lee ,  Tae Hun Lee ,  Hee Geun Jeong

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689 ,  H04N5/374 ,  H04N9/045

Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.