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公开(公告)号：US10096637B2
公开(公告)日：2018-10-09
申请号：US15447345
申请日：2017-03-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Woo Chung , Tae Hun Lee , Hee Geun Jeong
IPC: H01L27/146 , H01L21/764 , H01L21/762 , H01L21/763 , H01L29/06 , H01L31/18
Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.
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公开(公告)号：US11074066B2
公开(公告)日：2021-07-27
申请号：US16648949
申请日：2018-09-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung Heun Shin , Junha Kim , Tae Hun Lee , Tae Yoon Hwang
Abstract: Disclosed is a system including at least one network interface; at least one processor operatively connected to the at least one network interface; and at least one memory configured to store a plurality of versions of software updates for a group of mobile devices and operatively connected to the at least one processor, wherein the at least one memory stores instructions causing the at least one processor, when executed, to receive a request for providing a list of software updates from an external server through the at least one network interface, to generate the list of the software updates, the list including information on a plurality of versions of the software updates, to provide the list to the external server through the at least one network interface, to receive a request for providing a selected version of the software update from one of the mobile devices through the at least one network interface, and to provide the selected version of the software update to the one of the mobile devices through the at least one network interface, the selected version not being the latest version. Other embodiments are possible.
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公开(公告)号：US09620546B2
公开(公告)日：2017-04-11
申请号：US14856698
申请日：2015-09-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Woo Chung , Tae Hun Lee , Hee Geun Jeong
IPC: H01L27/146 , H01L21/762 , H01L21/763 , H01L21/764 , H01L31/18 , H01L29/06
CPC classification number: H01L27/1463 , H01L21/76224 , H01L21/763 , H01L21/764 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14683 , H01L29/0649 , H01L31/18
Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.
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公开(公告)号：US09608024B2
公开(公告)日：2017-03-28
申请号：US14872691
申请日：2015-10-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung Wook Lee , Yi Tae Kim , Jong Eun Park , Jung Chak Ahn , Kyung Ho Lee , Tae Hun Lee , Hee Geun Jeong
IPC: H01L31/062 , H01L31/113 , H01L27/146 , H04N5/374 , H04N9/04
CPC classification number: H01L27/1463 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14689 , H04N5/374 , H04N9/045
Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.
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