公开(公告)号：US10396119B2

公开(公告)日：2019-08-27

申请号：US15905007

申请日：2018-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Chan Kim ,  Seung-Sik Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

公开(公告)号：US09929204B2

公开(公告)日：2018-03-27

申请号：US14660570

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Chan Kim ,  Seung-Sik Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

CPC classification number: H01L27/14683 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/3559

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.