公开(公告)号：US20130343696A1

公开(公告)日：2013-12-26

申请号：US13826471

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Gu KIM ,  Dong-Jae SHIN ,  Yong-Hwack SHIN ,  Young CHOI ,  Kyoung-Ho HA

IPC: G02B6/12

CPC classification number: G02B6/12 ,  G02B6/12004 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract translation: 光学集成电路可以包括包括单晶半导体材料的衬底，在衬底的<100>晶体取向中延伸并包括单晶半导体材料的无源元件和以<110>晶体取向延伸的有源元件 并且包括单晶半导体材料。

公开(公告)号：US20190229492A1

公开(公告)日：2019-07-25

申请号：US16152661

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho CHA ,  Seong-Gu KIM ,  Dong-Jae SHIN ,  Yong-Hwack SHIN ,  Kyoung-Ho HA

IPC: H01S5/024 ,  H01S5/10 ,  H01S5/042 ,  H01S5/20 ,  H01S5/026 ,  H01S5/323 ,  H01S5/40

Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

公开(公告)号：US20140212087A1

公开(公告)日：2014-07-31

申请号：US14163069

申请日：2014-01-24

Applicant: Samsung Electronics Co., Ltd

Inventor： Kwan-Sik CHO ,  Jung-Hye KIM ,  Yong-Hwack SHIN

IPC: G02B6/136

CPC classification number: G02B6/136 ,  G02B6/43 ,  H01L27/0617 ,  H01L27/10894 ,  H01L27/10897

Abstract: A method of manufacturing a semiconductor apparatus includes forming a gate structure and an etch stop layer structure on a substrate including first and second regions. The gate structure is formed in the first region, and the etch stop layer structure is formed in the second region. A first insulating interlayer is formed on the substrate to cover the gate structure and the etch stop layer structure. The first insulating interlayer is partially removed to expose the etch stop layer structure. The exposed etch stop layer is removed to expose the substrate. An optical device is formed on the exposed substrate.

Abstract translation: 制造半导体器件的方法包括在包括第一和第二区域的衬底上形成栅极结构和蚀刻停止层结构。 栅极结构形成在第一区域中，并且蚀刻停止层结构形成在第二区域中。 在衬底上形成第一绝缘中间层以覆盖栅极结构和蚀刻停止层结构。 部分去除第一绝缘中间层以暴露蚀刻停止层结构。 去除暴露的蚀刻停止层以暴露衬底。 在曝光的基板上形成光学器件。