公开(公告)号：US20240201578A1

公开(公告)日：2024-06-20

申请号：US18449078

申请日：2023-08-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Myoungho KANG ,  Yongah KIM

IPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/705

摘要： An optical proximity correction (OPC) method includes generating a mask layout for target patterns on a wafer, dividing edges of the mask layout into fragments, generating a rotated mask layout by rotating the mask layout at a predetermined angle, extracting a contour of a target pattern by inputting data on the fragments of the rotated mask layout to an OPC model, calculating an edge placement error (EPE) for each fragment, determining whether to re-perform the extracting of the contour of the target pattern, calculating displacements of the fragments when it is determined that the extracting of the contour of the target pattern is re-performed, and moving the fragments by the displacements.