Semiconductor light emitting device and method of fabricating the same

    公开(公告)号:US11515449B2

    公开(公告)日:2022-11-29

    申请号:US16935356

    申请日:2020-07-22

    Abstract: Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.

    Display device and method of fabricating the same

    公开(公告)号:US10818649B2

    公开(公告)日:2020-10-27

    申请号:US16415048

    申请日:2019-05-17

    Abstract: Display devices and methods of fabricating display devices are provided. The display device includes a circuit board; a first light-emitting device array substrate mounted on the circuit board; and a second light-emitting device array substrate mounted on the circuit board adjacent the first light-emitting device array substrate in a first direction. The circuit board defines a groove that overlaps a boundary between the first light-emitting device array substrate and the second light-emitting device array substrate.

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