公开(公告)号：US12159895B2

公开(公告)日：2024-12-03

申请号：US17374568

申请日：2021-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye Yeon ,  Sammook Kang ,  Hankyu Seong ,  Jongin Yang ,  Hanul Yoo ,  Jihoon Yun

IPC: H01L27/15 ,  G09G3/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: A display apparatus includes a circuit board including a driving circuit, and a pixel array including a plurality of pixels on the circuit board, each including a plurality of sub-pixels, and a light blocking partition between the plurality of sub-pixels. Each of the plurality of sub-pixels includes a lower light emitting diode (LED) cell configured to generate light of a first wavelength. A first sub-pixel includes a transparent resin structure on the first lower LED cell, a second sub-pixel includes an inter-cell insulating layer on the second lower LED cell and an upper LED cell having on the inter-cell insulating layer and configured to generate light of a second wavelength, and a third sub-pixel includes a wavelength conversion structure on the third lower LED cell and configured to convert light of the first wavelength into light of a third wavelength.

公开(公告)号：US11935910B2

公开(公告)日：2024-03-19

申请号：US17027960

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Joosung Kim ,  Donggun Lee ,  Suhyun Jo

IPC: H01L29/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/405 ,  H01L33/42 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.

公开(公告)号：US11380818B2

公开(公告)日：2022-07-05

申请号：US15932000

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Hankyu Seong ,  Sunghyun Sim ,  Jihye Yeon ,  Hanul Yoo ,  Jihoon Yun

IPC: H01L33/24 ,  H01L33/50 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L27/15 ,  H01L33/00

Abstract: A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.

公开(公告)号：US11515449B2

公开(公告)日：2022-11-29

申请号：US16935356

申请日：2020-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Yongil Kim ,  Juhyun Kim ,  Tan Sakong ,  Jonguk Seo ,  Suhyun Jo

IPC: H01L33/38 ,  H01L33/62

Abstract: Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.

公开(公告)号：US20220139999A1

公开(公告)日：2022-05-05

申请号：US17374568

申请日：2021-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye YEON ,  Sammook Kang ,  Hankyu Seong ,  Jongin Yang ,  Hanul Yoo ,  Jihoon Yun

IPC: H01L27/15 ,  G09G3/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: A display apparatus includes a circuit board including a driving circuit, and a pixel array including a plurality of pixels on the circuit board, each including a plurality of sub-pixels, and a light blocking partition between the plurality of sub-pixels. Each of the plurality of sub-pixels includes a lower light emitting diode (LED) cell configured to generate light of a first wavelength. A first sub-pixel includes a transparent resin structure on the first lower LED cell, a second sub-pixel includes an inter-cell insulating layer on the second lower LED cell and an upper LED cell having on the inter-cell insulating layer and configured to generate light of a second wavelength, and a third sub-pixel includes a wavelength conversion structure on the third lower LED cell and configured to convert light of the first wavelength into light of a third wavelength.

公开(公告)号：US20210249466A1

公开(公告)日：2021-08-12

申请号：US17027960

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongin Yang ,  Joosung Kim ,  Donggun Lee ,  Suhyun Jo

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.