公开(公告)号：US11302745B2

公开(公告)日：2022-04-12

申请号：US16901451

申请日：2020-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye Yeon ,  Hanul Yoo ,  Jihoon Yun ,  Suhyun Jo

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L27/12 ,  H01L33/00 ,  H01L23/00

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

公开(公告)号：US11935910B2

公开(公告)日：2024-03-19

申请号：US17027960

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Joosung Kim ,  Donggun Lee ,  Suhyun Jo

IPC: H01L29/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/405 ,  H01L33/42 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.

公开(公告)号：US11728371B2

公开(公告)日：2023-08-15

申请号：US17716492

申请日：2022-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye Yeon ,  Hanul Yoo ,  Jihoon Yun ,  Suhyun Jo

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L33/00 ,  H01L27/12 ,  H01L23/00

CPC classification number: H01L27/156 ,  H01L24/08 ,  H01L24/89 ,  H01L25/18 ,  H01L27/124 ,  H01L27/1248 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/382 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80001 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

公开(公告)号：US12087019B2

公开(公告)日：2024-09-10

申请号：US17350058

申请日：2021-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonseok Lee ,  Suhyun Jo ,  Yunseok Choi

IPC: G06T9/00 ,  G06T3/40 ,  H04N19/105 ,  H04N19/182 ,  H04N19/186 ,  H04N19/46

CPC classification number: G06T9/00 ,  G06T3/40 ,  H04N19/105 ,  H04N19/182 ,  H04N19/186 ,  H04N19/46

Abstract: Provided is an image compression method for compressing image data generated by an image sensor, the image compression method including detecting a saturated pixel among a plurality of pixels included in a pixel group included in the image data, the saturated pixel having a pixel value exceeding a threshold value, and the plurality of pixels being adjacent to each other and having a same color as each other, generating a saturation flag indicating a position of the saturated pixel, compressing the image data by comparing a reference pixel with at least one non-saturated pixel among the plurality of pixels included in the pixel group, and outputting a bitstream including the saturation flag, a compression result, and a compression method.

公开(公告)号：US11515449B2

公开(公告)日：2022-11-29

申请号：US16935356

申请日：2020-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Yang ,  Yongil Kim ,  Juhyun Kim ,  Tan Sakong ,  Jonguk Seo ,  Suhyun Jo

IPC: H01L33/38 ,  H01L33/62

Abstract: Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.

公开(公告)号：US20210249466A1

公开(公告)日：2021-08-12

申请号：US17027960

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongin Yang ,  Joosung Kim ,  Donggun Lee ,  Suhyun Jo

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.