公开(公告)号：US20240329862A1

公开(公告)日：2024-10-03

申请号：US18739263

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YooJin Nam ,  Woongdai Kang ,  Seung-Jun Lee ,  Dongyeong Choi

IPC: G06F3/06

CPC classification number: G06F3/0632 ,  G06F3/0625 ,  G06F3/0679

Abstract: Disclosed is an operation method of a memory device which performs a self-refresh operation. The method includes receiving a deep-sleep mode enter command from a memory controller, changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage smaller than the first voltage, in response to the deep-sleep mode enter command, and entering a self-refresh mode under control of the memory controller, and the internal voltage is maintained at the second voltage during the self-refresh mode.