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公开(公告)号:US20240354191A1
公开(公告)日:2024-10-24
申请号:US18649031
申请日:2024-04-29
Applicant: Rambus Inc.
Inventor: Michael Raymond MILLER , Stephen Magee , John Eric Linstadt
CPC classification number: G06F11/1076 , G06F3/0619 , G06F3/0625 , G06F3/0644 , G06F3/0673 , G06F11/1048
Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.
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公开(公告)号:US20240354012A1
公开(公告)日:2024-10-24
申请号:US18760849
申请日:2024-07-01
Applicant: Ambiq Micro, Inc.
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0626 , G06F3/0655 , G06F3/0673
Abstract: A low-power system-on-chip includes an originating controller, a fabric, and a power controller. The originating controller is configured to initiate a memory transaction request including a source address. The fabric includes an arbiter configured to receive the memory transaction request and determine a first memory device associated with the memory transaction request. The power controller is configured to selectively change a first memory bank of the first memory device from a first power mode to a second power mode based at least in part on the source address. The fabric is configured to perform a memory operation by (a) receiving stored data from memory storage locations corresponding to the source address when the memory transaction request includes a read request, and (b) sending data included in the memory transaction request to the memory storage locations when the memory transaction request includes a program or a write request.
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公开(公告)号:US12124712B2
公开(公告)日:2024-10-22
申请号:US18179563
申请日:2023-03-07
Applicant: Hitachi, Ltd.
Inventor: Naoya Okada , Kentaro Shimada , Yuki Kotake , Yukiyoshi Takamura
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0655 , G06F3/0679
Abstract: A storage system includes a storage controller and a plurality of storage drives. The storage controller holds power management information for managing power supplied to the storage system and power consumption of an operating mounted device of the storage system, and definition information for defining a relationship between power states and power consumption of the plurality of storage drives. The storage controller determines a power budget that can be supplied to the plurality of storage drives, based on the power management information according to a change in a configuration of the storage system, and determines a power state of each of the plurality of storage drives based on the power budget and the definition information.
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公开(公告)号:US20240345744A1
公开(公告)日:2024-10-17
申请号:US18638480
申请日:2024-04-17
Applicant: Micron Technology, Inc.
Inventor: Ferdinando Bedeschi
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0629 , G06F3/0673
Abstract: Methods, systems, and devices for transistor configurations for vertical memory arrays are described. A memory device may implement a multi-transistor architecture, such as a two-transistor architecture, that is operable to couple pillars with bit lines. For example, a memory device may include a conductive pillar that extends through levels of a memory array. The pillar may be coupled with a first bit line via a first transistor and coupled with a second bit line via a second transistor. To access a memory cell coupled with the pillar, the memory device may bias a word line coupled with the memory cell to a first access voltage, bias one of the bit lines to a second access voltage, activate one of the transistors to couple the pillar with the one of the bit lines, and deactivate the other transistor to isolate the pillar from the other of the bit lines.
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公开(公告)号:US12119057B2
公开(公告)日:2024-10-15
申请号:US17540884
申请日:2021-12-02
Applicant: Intel Corporation
Inventor: Rouhollah Mousavi Iraei , Mini Goel , Raymond Zeng , Hemant P. Rao
CPC classification number: G11C13/004 , G06F3/0625 , G06F3/0653 , G06F3/0679 , G11C13/0004 , G11C13/0023
Abstract: In one embodiment, a state is reach from a memory cell comprising a phase change material (PM) region and a select device (SD) region by: ramping a voltage applied to a first address line of an address line pair corresponding to the memory cell until the first address line voltage is stabilized at a predetermined voltage, ramping a voltage applied to a second address line of the address line pair corresponding to the memory cell, detecting a snap in the memory cell while ramping the voltage applied to the second address line, and determining a state of the memory cell based on a differential voltage between the first and second address lines when the memory cell snap occurred.
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公开(公告)号:US12118219B2
公开(公告)日:2024-10-15
申请号:US17903189
申请日:2022-09-06
Applicant: Western Digital Technologies, Inc.
Inventor: Shay Benisty , Yossi Yoseph Hassan
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0631 , G06F3/0673
Abstract: A data storage device includes a memory device and a controller. The controller is configured to assert a strobe cycle having a plurality of strobes to the memory device, where a die of the memory device may be associated with one or more strobes of the plurality of strobes. The controller is further configured to determine whether the die of the memory device requires additional power and adjust a strobe length of time of the corresponding strobe when the die of the memory device requires additional power. The controller is further configured to decrease a strobe length of time of one or more strobes that do not require additional power. By utilizing a time division peak power management (TD-PPM) feature by dynamically changing a strobe length of time of each strobe of the plurality of strobes, performance and latency of the data storage device may be improved.
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公开(公告)号:US12112049B2
公开(公告)日:2024-10-08
申请号:US18051150
申请日:2022-10-31
Applicant: ScaleFlux, Inc.
Inventor: Kelly Fitzpatrick , Yang Liu , Tong Zhang
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0631 , G06F3/064 , G06F3/0679
Abstract: A self-managed DRAM module configured to reduce energy consumption. A module is described that includes a plurality of DDR channels and a management engine configured to read and write data blocks to DDR channels according to a process that includes: allocating a set of sub-channels for each DDR channel, wherein each sub-channel includes a subset of the set of DRAM chips; wherein a write operation of a data block includes: encoding the data block to generate an ECC codeword; and writing the ECC codeword into the subset of DRAM chips of a specified sub-channel; and wherein a read operation of the data block includes: reading the ECC codeword from the subset of DRAM chips of the specified sub-channel; and decoding the ECC codeword to obtain the data block.
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公开(公告)号:US12112048B2
公开(公告)日:2024-10-08
申请号:US17939186
申请日:2022-09-07
Applicant: Western Digital Technologies, Inc.
Inventor: Shay Benisty , Ariel Navon , Alexander Bazarsky , David Avraham
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0653 , G06F3/0673
Abstract: The present disclosure generally relates to improving adaptive tuning of different clock rates of a memory device. Rather than clock rates only being determined off of one parameter such as workload, the clock rates now will be determined using multiple parameters. The tuning may be based on system parameters to allow the system to withstand challenges that arise during the operation. The clock frequency table is maintained in the device controller. The table holds the clock frequency of each component. The disclosure proposes modifying the table according to different system environment parameters to maintain performance or reduce power consumption. Adaptive tuning allows a more flexible system design that can adapt according to the current system status. Adaptive tuning also reduces peak power consumption, improves performance, and better quality of service (QoS) compatibility characteristics.
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公开(公告)号:US12105574B2
公开(公告)日:2024-10-01
申请号:US17729854
申请日:2022-04-26
Applicant: Western Digital Technologies, Inc.
Inventor: Refael Ben-Rubi
IPC: G06F1/3234 , G06F1/08 , G06F1/3203 , G06F1/3221 , G06F1/3225 , G06F1/324 , G06F3/06 , G06F9/54 , G06F11/34
CPC classification number: G06F1/3268 , G06F1/324 , G06F1/08 , G06F1/3203 , G06F1/3221 , G06F1/3225 , G06F1/3275 , G06F3/0625 , G06F3/0656 , G06F9/546 , G06F11/3409
Abstract: The present disclosure generally relates to ensuring a data storage device consumes as little power as possible. Different HW modules in the data storage device can operate at different frequencies to ensure any bottleneck HW modules operate at as fast a frequency as possible, while non-bottleneck HW modules operate at slower frequencies and hence, consume less power. The frequency for each HW modules is dynamic and is adjusted based upon detected bottlenecks so that the data storage device can operate as efficiently as possible and consume as little power as possible.
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公开(公告)号:US12099730B2
公开(公告)日:2024-09-24
申请号:US18321893
申请日:2023-05-23
Applicant: PROMISE TECHNOLOGY, INC.
Inventor: Zhi-Yu Wu , Cheng-Chou Wang , Che-Jen Wang
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0655 , G06F3/0673
Abstract: A data storage system with intelligent power management includes a plurality of data storage devices and a controller. Each data storage device is capable of operating in one of (N+1) power saving functions where N is an integer larger than 1. The (N+1) power saving functions sequentially correspond to from the 0th to the Nth power saving levels. The controller reads a user-setting power saving level (I) where I is an integer index ranging from 0 to N. The controller reads a current power saving level (J) of a current power saving function of one of the plurality of data storage devices where J is an integer index ranging from 0 to N. The controller controls said one data storage device to operate in one power saving function among the (N+1) power saving functions according to the user-setting power saving level (I) and the current power saving level (J).
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