公开(公告)号：US12032838B2

公开(公告)日：2024-07-09

申请号：US17721450

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoojin Nam ,  Woongdai Kang ,  Seung-Jun Lee ,  Dongyeong Choi

IPC: G06F3/06

CPC classification number: G06F3/0632 ,  G06F3/0625 ,  G06F3/0679

Abstract: Disclosed is an operation method of a memory device which performs a self-refresh operation. The method includes receiving a deep-sleep mode enter command from a memory controller, changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage smaller than the first voltage, in response to the deep-sleep mode enter command, and entering a self-refresh mode under control of the memory controller, and the internal voltage is maintained at the second voltage during the self-refresh mode.

公开(公告)号：US20240329862A1

公开(公告)日：2024-10-03

申请号：US18739263

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YooJin Nam ,  Woongdai Kang ,  Seung-Jun Lee ,  Dongyeong Choi

IPC: G06F3/06

CPC classification number: G06F3/0632 ,  G06F3/0625 ,  G06F3/0679

Abstract: Disclosed is an operation method of a memory device which performs a self-refresh operation. The method includes receiving a deep-sleep mode enter command from a memory controller, changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage smaller than the first voltage, in response to the deep-sleep mode enter command, and entering a self-refresh mode under control of the memory controller, and the internal voltage is maintained at the second voltage during the self-refresh mode.

公开(公告)号：US12009048B2

公开(公告)日：2024-06-11

申请号：US17813715

申请日：2022-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghak Shin ,  Woongdai Kang

IPC: G11C5/14 ,  G11C8/10 ,  G11C8/18

CPC classification number: G11C5/148 ,  G11C8/10 ,  G11C8/18

Abstract: A semiconductor memory device includes a first power supply unit configured to, in a normal mode of a high frequency operation, supply a first power from a first global power rail to a third global power rail and a fourth global power rail in a normal mode, and, in a standby mode of a high frequency option, supply the first power to the third global power rail and not supply the first power to the fourth global power rail, and, in a normal mode of a low frequency operation, supply a second power of a second global power rail to the third global power rail and the fourth global power rail, and, in a standby mode of a low frequency operation, supply the second power to the third global power rail and not supply the second power to the fourth global power rail.