公开(公告)号：US20130277720A1

公开(公告)日：2013-10-24

申请号：US13780855

申请日：2013-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeong-cheol KIM ,  Cheol KIM ,  Jaehun SEO ,  YooJung LEE ,  Kisoo CHANG ,  Siyoung CHOI

IPC: H01L29/78

CPC classification number: H01L29/785 ,  H01L29/7851

Abstract: Field effect transistors include a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode.

Abstract translation: 场效应晶体管包括基板上的源极区域和漏极区域，从基板的顶面突出的翅片基底，从翅片基底向上延伸并将源极区域与漏极区域连接的多个翅片部分， 翅片部分之间的电极以及翅片部分和栅电极之间的栅极电介质。