公开(公告)号：US10186460B2

公开(公告)日：2019-01-22

申请号：US15651018

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangsu Kim ,  Yunsang Shin

IPC: H01L21/321 ,  H01L21/308 ,  H01L27/092 ,  H01L27/088 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/02 ,  H01L27/06 ,  H01L29/08

Abstract: A semiconductor device including a semiconductor substrate including first regions and second regions, at least one of the first regions being disposed between adjacent second regions; a plurality of first gate structures on the first regions of the semiconductor substrate; and a plurality of second gate structures on the second regions of the semiconductor substrate, wherein each of the first and second gate structures includes a lower gate structure including a recess region defined by sidewalls and a bottom connecting the sidewalls; and an upper gate structure including a gap-fill metal pattern that fills the recess region of the lower gate structure, wherein the bottom of the lower gate structure included in the first gate structure has a thickness different from a thickness of the bottom of the lower gate structure included in the second gate structure, and wherein the gap-fill metal patterns of the first and second gate structures have top surfaces at substantially a same level.