公开(公告)号：US20220358060A1

公开(公告)日：2022-11-10

申请号：US17872987

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dimin NIU ,  Mu-Tien CHANG ,  Hongzhong ZHENG ,  Sun Young LIM ,  lndong KIM ,  Jangseok CHOI ,  Craig HANSON

IPC: G06F13/16 ,  G06F13/42 ,  G06F13/40

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

公开(公告)号：US20200167297A1

公开(公告)日：2020-05-28

申请号：US16777206

申请日：2020-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dimin NIU ,  Mu-Tien CHANG ,  Hongzhong ZHENG ,  Sun Young LIM ,  lndong KIM ,  Jangseok CHOI ,  Craig HANSON

IPC: G06F13/16 ,  G06F13/40 ,  G06F13/42

Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.