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公开(公告)号:US20220358060A1
公开(公告)日:2022-11-10
申请号:US17872987
申请日:2022-07-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dimin NIU , Mu-Tien CHANG , Hongzhong ZHENG , Sun Young LIM , lndong KIM , Jangseok CHOI , Craig HANSON
Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
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公开(公告)号:US20200167297A1
公开(公告)日:2020-05-28
申请号:US16777206
申请日:2020-01-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dimin NIU , Mu-Tien CHANG , Hongzhong ZHENG , Sun Young LIM , lndong KIM , Jangseok CHOI , Craig HANSON
Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
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