公开(公告)号：US20210406631A1

公开(公告)日：2021-12-30

申请号：US17232298

申请日：2021-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSANG JANG ,  Junho Kim ,  lnhyuk Kim

IPC: G06K19/07 ,  G06K19/077 ,  H02M3/335

Abstract: An internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. The first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. The second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. The bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.