公开(公告)号：US20240105457A1

公开(公告)日：2024-03-28

申请号：US18131464

申请日：2023-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD..

Inventor： Woo Rim LEE ,  Myoung Jae Seo ,  In Hye Jeong ,  Sung Gil Kang

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01L21/67069 ,  H01J37/32522

Abstract: A substrate processing apparatus, a substrate processing method, and a method of fabricating a semiconductor device are provided. The substrate processing method includes providing a process gas, generating a preliminary etchant, which includes a first etchant and a second etchant, from the process gas through plasma ignition, generating a process etchant by controlling a composition ratio of the preliminary etchant, and performing a selective etching of the substrate with the process etchant.