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1.发明申请MEMORY SYSTEM TO DETERMINE INFERENCE OF A MEMORY CELL BY ADJACENT MEMORY CELLS, AND OPERATING METHOD THEREOF 有权用于确定由相邻记忆细胞记录的细胞的影响的记忆系统及其操作方法公开(公告)号：US20140185375A1
公开(公告)日：2014-07-03
申请号：US14196366
申请日：2014-03-04
Applicant: SAMSUNG Electronics Co., Ltd.
Inventor： Jaehong KIM , Kijun LEE , Yong June KIM , Heeseok EUN
CPC classification number: G11C16/3431 , G06F12/0238 , G11C11/5642 , G11C16/26 , G11C16/3427
Abstract: Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.
Abstract translation: 提供了一种存储器系统及其操作方法。 操作方法用不同的读取电压至少一次读取观察存储器单元以配置第一读取数据符号，至少用不同的读取电压读取与观察存储器单元相邻的多个干扰存储器单元以配置第二读取数据 符号，并且基于第一读取数据符号和第二读取数据符号确定观察存储器单元的逻辑值。
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公开(公告)号：US20140056064A1
公开(公告)日：2014-02-27
申请号：US14068143
申请日：2013-10-31
Applicant: SAMSUNG Electronics Co., Ltd.
Inventor： Jaehong KIM , Kijun LEE , Yong June KIM , Heeseok EUN
CPC classification number: G11C16/3427 , G11C16/26
Abstract: Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.
Abstract translation: 提供了一种存储器系统及其操作方法。 操作方法用不同的读取电压至少一次读取观察存储器单元以配置第一读取数据符号，至少用不同的读取电压读取与观察存储器单元相邻的多个干扰存储器单元以配置第二读取数据 符号，并且基于第一读取数据符号和第二读取数据符号确定观察存储器单元的逻辑值。
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