公开(公告)号：US20220367449A1

公开(公告)日：2022-11-17

申请号：US17501163

申请日：2021-10-14

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Akihiro YUU ,  Dai IWATA ,  Hiroyuki OGAWA

IPC: H01L27/088 ,  H01L21/762 ,  G11C7/06 ,  H01L29/06

Abstract: A first field effect transistor contains a first active region including a source region, a drain region and a channel region located between the source region and the drain region, a first gate dielectric overlying the active region, and a first gate electrode overlying the first gate dielectric. A second field effect transistor contains a second active region including a source region, a drain region and a channel region located between the source region and the drain region, a second gate dielectric overlying the active region, a second gate electrode overlying the second gate dielectric. A trench isolation region surrounds the first and the second active regions. The first field effect transistor includes a fringe region in which the first gate electrode extends past the active region perpendicular to the source region to drain region direction and the second field effect transistor does not include the fringe region.