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    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME
    1.
    发明公开
    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME 审中-公开

    公开(公告)号：US20240063278A1

    公开(公告)日：2024-02-22

    申请号：US18500623

    申请日：2023-11-02

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Dai IWATA ,  Hokuto KODATE

    IPC: H01L29/423 ,  H01L27/06 ,  H01L29/66 ,  H01L29/06

    CPC classification number: H01L29/42364 ,  H01L27/0617 ,  H01L29/6656 ,  H01L29/0653

    Abstract: A lateral extent of a gate electrode of a field effect transistor along a gate electrode direction that is perpendicular to a channel direction can be the same as a width of an underlying active region. A gate electrode of an additional field effect transistor may extend over a trench isolation structure that laterally surrounds the additional field effect transistor. Different types of electrodes may be formed by patterning a lower gate material layer and by patterning an upper gate material layer with different patterns such that patterned portions of the lower gate material layer are confined within areas of active regions, while patterned portions of the upper gate material layer extends outside of the areas of the active regions.

    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME
    4.
    发明公开
    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME 审中-公开

    公开(公告)号：US20240147730A1

    公开(公告)日：2024-05-02

    申请号：US18500721

    申请日：2023-11-02

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Kiyokazu SHISHIDO ,  Kazutaka YOSHIZAWA ,  Dai IWATA ,  Hokuto KODATE

    IPC: H10B43/40 ,  H10B41/40

    CPC classification number: H10B43/40 ,  H10B41/40 ,  G11C16/08

    Abstract: A lateral extent of a gate electrode of a field effect transistor along a gate electrode direction that is perpendicular to a channel direction can be the same as a width of an underlying active region. A gate electrode of an additional field effect transistor may extend over a trench isolation structure that laterally surrounds the additional field effect transistor. Different types of electrodes may be formed by patterning a lower gate material layer and by patterning an upper gate material layer with different patterns such that patterned portions of the lower gate material layer are confined within areas of active regions, while patterned portions of the upper gate material layer extends outside of the areas of the active regions.

    GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS OF FORMING THE SAME
    5.
    发明申请
    GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS OF FORMING THE SAME 有权

    公开(公告)号：US20220068915A1

    公开(公告)日：2022-03-03

    申请号：US17006265

    申请日：2020-08-28

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Hokuto KODATE ,  Hiroyuki OGAWA ,  Dai IWATA ,  Mitsuhiro TOGO

    IPC: H01L27/06 ,  H01L21/8234

    Abstract: At least one of a capacitor or a resistor structure can be formed concurrently with formation of a field effect transistor by patterning a gate dielectric layer into gate dielectric and into a first node dielectric or a first resistor isolation dielectric, and by patterning a semiconductor layer into a gate electrode and into a second electrode of a capacitor or a resistor strip. Contacts are then formed to the capacitor or resistor structure. Sidewall spacers may be formed on the gate electrode prior to patterning the capacitor or resistor contacts to reduce damage to the underlying capacitor or resistor layers.

    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME
    6.
    发明申请
    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20220367449A1

    公开(公告)日：2022-11-17

    申请号：US17501163

    申请日：2021-10-14

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Akihiro YUU ,  Dai IWATA ,  Hiroyuki OGAWA

    IPC: H01L27/088 ,  H01L21/762 ,  G11C7/06 ,  H01L29/06

    Abstract: A first field effect transistor contains a first active region including a source region, a drain region and a channel region located between the source region and the drain region, a first gate dielectric overlying the active region, and a first gate electrode overlying the first gate dielectric. A second field effect transistor contains a second active region including a source region, a drain region and a channel region located between the source region and the drain region, a second gate dielectric overlying the active region, a second gate electrode overlying the second gate dielectric. A trench isolation region surrounds the first and the second active regions. The first field effect transistor includes a fringe region in which the first gate electrode extends past the active region perpendicular to the source region to drain region direction and the second field effect transistor does not include the fringe region.

    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME
    7.
    发明申请
    TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20220359690A1

    公开(公告)日：2022-11-10

    申请号：US17316015

    申请日：2021-05-10

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Dai IWATA ,  Hiroshi NAKATSUJI ,  Hiroyuki OGAWA ,  Eiichi FUJIKURA

    IPC: H01L29/423 ,  H01L29/66 ,  H01L27/07 ,  H01L21/8238 ,  H01L29/40

    Abstract: A field effect transistor includes a gate dielectric and a gate electrode overlying an active region and contacting a sidewall of a trench isolation structure. The transistor may be a fringeless transistor in which the gate electrode does not overlie a portion of the trench isolation region. A planar dielectric spacer plate and a conductive gate cap structure may overlie the gate electrode. The conductive gate cap structure may have a z-shaped vertical cross-sectional profile to contact the gate electrode and to provide a segment overlying the planar dielectric spacer plate. Alternatively or additionally, a conductive gate connection structure may be provided to provide electrical connection between two electrodes of adjacent field effect transistors.

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