公开(公告)号：US10224407B2

公开(公告)日：2019-03-05

申请号：US15444725

申请日：2017-02-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Murshed Chowdhury ,  Andrew Lin ,  James Kai ,  Yanli Zhang ,  Johann Alsmeier

IPC: H01L21/28 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423

Abstract: A trench having a uniform depth is provided in an upper portion of a semiconductor substrate. A continuous dielectric material layer is formed, which includes a gate dielectric that fills an entire volume of the trench. A gate electrode is formed over the gate dielectric such that the gate electrode overlies a center portion of the gate dielectric and does not overlie a first peripheral portion and a second peripheral portion of the gate dielectric that are located on opposing sides of the center portion of the gate dielectric. After formation of a dielectric gate spacer, a source extension region and a drain extension region are formed within the semiconductor substrate by doping respective portions of the semiconductor substrate.