公开(公告)号：US20220199686A1

公开(公告)日：2022-06-23

申请号：US17654768

申请日：2022-03-14

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lei WAN ,  Jordan KATINE ,  Tsai-Wei WU ,  Chu-Chen FU

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02

Abstract: A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along a first horizontal direction than along a second horizontal direction, and a dielectric spacer or a tapered etch process may be used to provide a pattern of an etch mask for patterning first electrically conductive lines underneath the magnetoresistive memory cells. Alternatively, a resist layer may be employed to pattern first electrically conductive lines underneath the cross-point array. Alternatively, a protective dielectric liner may be provided to protect selector-containing pillar structures during formation of the magnetic tunnel junction pillar structures.