公开(公告)号：US11495612B2

公开(公告)日：2022-11-08

申请号：US16918463

申请日：2020-07-01

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoshinobu Tanaka ,  Koichi Ito ,  Hideaki Hasegawa ,  Akihiro Tobioka ,  Sung Tae Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L21/311 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11529

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings and support openings are formed through the alternating stack, and memory opening fill structures and support pillar structures are formed in the memory openings and in the support openings, respectively. Via cavities extending to each of the sacrificial material layers are formed through the alternating stack without forming any stepped surfaces in the alternating stack. The via cavities may be formed in areas that do not overlap with the support pillar structures, or in areas that include at least one support pillar structure. Sacrificial via fill structures are formed in the via cavies, and the sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are removed, and a combination of a tubular dielectric spacer and a contact via structure can be formed in the via cavities.

公开(公告)号：US11450679B2

公开(公告)日：2022-09-20

申请号：US16918493

申请日：2020-07-01

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoshinobu Tanaka ,  Koichi Ito ,  Hideaki Hasegawa ,  Akihiro Tobioka ,  Sung Tae Lee

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582 ,  H01L21/768 ,  H01L23/522 ,  H01L27/11529 ,  H01L21/311 ,  H01L27/11573

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings and support openings are formed through the alternating stack, and memory opening fill structures and support pillar structures are formed in the memory openings and in the support openings, respectively. Via cavities extending to each of the sacrificial material layers are formed through the alternating stack without forming any stepped surfaces in the alternating stack. The via cavities may be formed in areas that do not overlap with the support pillar structures, or in areas that include at least one support pillar structure. Sacrificial via fill structures are formed in the via cavies, and the sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are removed, and a combination of a tubular dielectric spacer and a contact via structure can be formed in the via cavities.