公开(公告)号：US20230328976A1

公开(公告)日：2023-10-12

申请号：US17715549

申请日：2022-04-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takaaki Iwai ,  Tomohiro Kubo ,  Kento Iseri

IPC: H01L27/11524 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L27/11524 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/5226 ,  H01L23/5283

Abstract: A three-dimensional memory device includes a source-level structure located over a substrate, an alternating stack of insulating layers and electrically conductive layers located over the source-level structure, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings. The source-level structure includes a lower source-level semiconductor layer including elongated grooves in an upper portion thereof, doped semiconductor source rails located within the elongated grooves, and an upper source-level semiconductor layer. The doped semiconductor source rails are laterally spaced apart from each other along a first horizontal direction and laterally extend along a second horizontal direction. Each of the memory opening fill structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel that contacts a respective one of the doped semiconductor source rails.