公开(公告)号：US20190096904A1

公开(公告)日：2019-03-28

申请号：US15715629

申请日：2017-09-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Masato NOGUCHI ,  Junichi SATO

IPC: H01L27/11582 ,  H01L21/02 ,  H01L27/11556 ,  H01L21/311

Abstract: A source select level silicon nitride layer and an alternating stack of insulating layers and sacrificial silicon nitride layers are formed over a substrate. A memory opening is formed through the alternating stack and the source select level silicon nitride layer. The source select level silicon nitride layer is laterally recessed farther than the sacrificial silicon nitride layers employing an isotropic etch process. A pedestal channel portion including a laterally protruding annular portion is formed at a bottom region of the memory opening. A memory stack structure is formed on the pedestal channel portion in the memory opening. The source select level silicon nitride layer and the sacrificial silicon nitride layers are replaced with a source select level electrically conductive layer and word line electrically conductive layers, respectively.

公开(公告)号：US20240387374A1

公开(公告)日：2024-11-21

申请号：US18788855

申请日：2024-07-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Masato NOGUCHI ,  Kento KITAMURA ,  Yusuke YOSHIDA

IPC: H01L23/528 ,  G11C16/04 ,  H01L23/522 ,  H01L23/532 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers that is located on a front side of a source layer, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, a dielectric material portion laterally offset from the alternating stack, a connection via structure vertically extending through the dielectric material portion and contacting a front side surface of a metallic plate, and a backside contact pad in electrical contact with the metallic plate.