公开(公告)号：US20200006080A1

公开(公告)日：2020-01-02

申请号：US16380260

申请日：2019-04-10

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yusuke OSAWA ,  Syo FUKATA ,  Naoto UMEHARA ,  Sung Tae LEE

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.