公开(公告)号：US20190229125A1

公开(公告)日：2019-07-25

申请号：US15877219

申请日：2018-01-22

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fei Zhou ,  Raghuveer S. Makala ,  Hiroyuki Kinoshita ,  Yanli Zhang ,  James Kai ,  Johann Alsmeier ,  Stephen Ross ,  Senaka Kanakamedala

IPC: H01L27/11556 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582 ,  H01L23/522 ,  H01L21/768

Abstract: A three-dimensional memory device includes semiconductor devices located on a semiconductor substrate, lower interconnect level dielectric layers embedding lower interconnect structures, an alternating stack of insulating layers and electrically conductive layers overlying the lower interconnect level dielectric layers and including stepped surfaces, memory stack structures vertically extending through the alternating stack, and contact via structures extending downward from the stepped surfaces through underlying portions of the alternating stack to the lower interconnect structures. Each of the contact via structures laterally contacts an electrically conductive layer located at the stepped surfaces, and provides electrical interconnection to an underlying semiconductor device. A top portion of each contact via structures contacts an electrically conductive layer, and is electrically isolated from other underlying electrically conductive layers.