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公开(公告)号:US10811058B2
公开(公告)日:2020-10-20
申请号:US16269301
申请日:2019-02-06
Applicant: SANDISK TECHNOLOGIES LLC
Inventor: Yanli Zhang , Zhixin Cui , Akio Nishida , Johann Alsmeier , Yan Li , Steven Sprouse
IPC: G11C5/06 , G06F11/08 , G11C8/14 , H01L23/538 , H01L27/105 , H01L23/498 , H01L25/065
Abstract: A bonded assembly includes a memory die bonded to a support die. The memory die contains at least one three-dimensional array of memory elements, memory-die dielectric material layers, and memory-die bonding pads. The support die contains at least one peripheral circuitry including complementary metal-oxide-semiconductor (CMOS) devices and configured to generate control signals for, and receive sense signals from, the at least one three-dimensional array of memory elements and a functional module and configured to provide a functionality that is independent of operation of the at least one three-dimensional array of memory elements. The functional module may include an error correction code (ECC) module, a memory module configured to interface with an external processor module located outside of the memory die, a microprocessor unit module, a wireless communication module, and/or a system level controller module.
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公开(公告)号:US10142419B2
公开(公告)日:2018-11-27
申请号:US15179325
申请日:2016-06-10
Applicant: SANDISK TECHNOLOGIES LLC
Inventor: Xinmiao Zhang , Steven Sprouse , Ishai Ilani
Abstract: In an illustrative example, a method includes receiving data that includes a set of data symbols. The method further includes generating a set of parity symbols based on the set of data symbols using an erasure correcting code. The set of parity symbols includes at least a first parity symbol that is generated based on a first proper subset of the set of data symbols. The first parity symbol enables recovery of a data symbol of the first proper subset independently of a second proper subset of the set of data symbols.
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公开(公告)号:US09870149B2
公开(公告)日:2018-01-16
申请号:US14937793
申请日:2015-11-10
Applicant: SanDisk Technologies LLC
Inventor: Steven Sprouse , Ryan Marlin
CPC classification number: G06F3/0604 , G06F3/0631 , G06F3/0688 , G06F12/0246 , G06F12/0253 , G06F2212/1016 , G06F2212/1036 , G06F2212/7205 , G06F2212/7208
Abstract: A method of scheduling memory operations to be performed by non-volatile memory devices in a storage system includes identifying a plurality of memory operations to be performed by a plurality of non-volatile memory devices in the storage system. The number of memory operations in the plurality of memory operations is no greater than the number of non-volatile memory devices in the plurality of non-volatile memory devices; each memory operation is to be performed by a distinct non-volatile memory device; and the memory operations include host writes, garbage collection writes, and garbage collection reads. The method also includes, for each non-volatile memory device, assigning preference values to each of the memory operations. The method further includes assigning each memory operation to a distinct non-volatile memory device, using the preference values assigned to each of the memory operations for each non-volatile memory device.
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