公开(公告)号：US11355515B2

公开(公告)日：2022-06-07

申请号：US16880365

申请日：2020-05-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Naoto Hojo ,  Takahiro Tabira ,  Yoshitaka Otsu

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/768 ,  H01L21/28 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526

Abstract: Fabricating a three-dimensional memory device may include forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Stepped surfaces are formed by patterning the alternating stack. Sacrificial pads are formed on physically exposed horizontal surfaces of the sacrificial material layers. A retro-stepped dielectric material portion is formed over the sacrificial pads. After memory stack structures extending through the alternating stack are formed, the sacrificial material layers and the sacrificial pads can be replaced with replacement material portions that include electrically conductive layers. The electrically conductive layers can be formed with thicker end portions. Contact via structures can be formed on the thicker end portions.

公开(公告)号：US20200286916A1

公开(公告)日：2020-09-10

申请号：US16880365

申请日：2020-05-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Naoto Hojo ,  Takahiro Tabira ,  Yoshitaka Otsu

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L21/768 ,  H01L27/11565 ,  H01L21/311 ,  H01L21/28 ,  H01L27/1157

Abstract: Fabricating a three-dimensional memory device may include forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Stepped surfaces are formed by patterning the alternating stack. Sacrificial pads are formed on physically exposed horizontal surfaces of the sacrificial material layers. A retro-stepped dielectric material portion is formed over the sacrificial pads. After memory stack structures extending through the alternating stack are formed, the sacrificial material layers and the sacrificial pads can be replaced with replacement material portions that include electrically conductive layers. The electrically conductive layers can be formed with thicker end portions. Contact via structures can be formed on the thicker end portions.

公开(公告)号：US10700089B1

公开(公告)日：2020-06-30

申请号：US16273523

申请日：2019-02-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Naoto Hojo ,  Takahiro Tabira ,  Yoshitaka Otsu

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/768 ,  H01L21/28 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526

Abstract: Fabricating a three-dimensional memory device may include forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Stepped surfaces are formed by patterning the alternating stack. Sacrificial pads are formed on physically exposed horizontal surfaces of the sacrificial material layers. A retro-stepped dielectric material portion is formed over the sacrificial pads. After memory stack structures extending through the alternating stack are formed, the sacrificial material layers and the sacrificial pads can be replaced with replacement material portions that include electrically conductive layers. The electrically conductive layers can be formed with thicker end portions. Contact via structures can be formed on the thicker end portions.