公开(公告)号：US20230083560A1

公开(公告)日：2023-03-16

申请号：US17474760

申请日：2021-09-14

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Mitsuhiro TOGO ,  Takashi KOBAYASHI ,  Sudarshan NARAYANAN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08

Abstract: A field effect transistor includes at least one line trench extending downward from a top surface of a channel region which laterally surrounds or underlies the at least one line trench, a gate dielectric contacting all surfaces of the at least one line trench and including a planar gate dielectric portion that extends over an entirety of a top surface of the channel region, a gate electrode, a source region, and a drain region.

公开(公告)号：US20230079098A1

公开(公告)日：2023-03-16

申请号：US17474699

申请日：2021-09-14

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Mitsuhiro TOGO ,  Takashi KOBAYASHI ,  Sudarshan NARAYANAN

IPC: H01L29/423 ,  H01L27/11529 ,  H01L27/11573 ,  H01L21/306 ,  H01L21/308 ,  H01L29/40

Abstract: A field effect transistor includes at least one line trench extending downward from a top surface of a channel region which laterally surrounds or underlies the at least one line trench, a gate dielectric contacting all surfaces of the at least one line trench and including a planar gate dielectric portion that extends over an entirety of a top surface of the channel region, a gate electrode, a source region, and a drain region.