公开(公告)号：US20200312859A1

公开(公告)日：2020-10-01

申请号：US16362988

申请日：2019-03-25

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoshitaka Otsu ,  Mitsuteru Mushiga ,  Yasushi Doda

IPC: H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L25/065 ,  G11C5/06 ,  H01L21/8234 ,  H01L21/768

Abstract: A three-dimensional memory device includes alternating stacks of insulating layers and electrically conductive layers located over a substrate. Each alternating stack within the plurality of alternating stacks is laterally spaced apart from one another by a network of interconnected trenches that extend through each level of the insulating layers and the electrically conductive layers. Groups of memory stack structures extend through a respective one of the alternating stacks. The network of interconnected trenches includes first lengthwise trenches laterally extending along a first horizontal direction by a first lateral trench extension distance, second lengthwise trenches laterally extending along the first horizontal direction and interlaced with the first lengthwise trenches to provide a laterally alternating sequence, and widthwise trenches connecting an end of a respective one of the second lengthwise trenches to a portion of a sidewall of a first lengthwise trench. The staircase regions provide a compact layout.