公开(公告)号：US10115770B2

公开(公告)日：2018-10-30

申请号：US15445734

申请日：2017-02-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Jongsun Sel ,  Daewung Kang ,  Michiaki Sano ,  Yohei Yamada ,  Mitsuteru Mushiga ,  Tuan Pham

IPC: H01L21/00 ,  H01L27/115 ,  H01L21/8234 ,  H01L27/24 ,  H01L45/00 ,  H01L29/78 ,  H01L21/306

Abstract: A method is provided that includes forming a dielectric material and a first sacrificial material above a substrate, forming a second sacrificial material above the substrate and disposed adjacent the dielectric material and the first sacrificial material, forming a first hole in the second sacrificial material, the first hole disposed in a first direction, forming a word line layer above the substrate via the first hole, the word line layer disposed in a second direction perpendicular to the first direction, forming a first portion of a nonvolatile memory material on peripheral sides of the word line layer via the first hole, forming a second hole in the second sacrificial material, forming a second portion of the nonvolatile memory material on a sidewall of the second hole, forming a local bit line in the second hole, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line layer.

公开(公告)号：US20180247976A1

公开(公告)日：2018-08-30

申请号：US15445734

申请日：2017-02-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Jongsun Sel ,  Daewung Kang ,  Michiaki Sano ,  Yohei Yamada ,  Mitsuteru Mushiga ,  Tuan Pham

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2454 ,  H01L21/30604 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/115 ,  H01L27/2481 ,  H01L29/78 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1608 ,  H01L45/1675 ,  H01L45/1683

Abstract: A method is provided that includes forming a dielectric material and a first sacrificial material above a substrate, forming a second sacrificial material above the substrate and disposed adjacent the dielectric material and the first sacrificial material, forming a first hole in the second sacrificial material, the first hole disposed in a first direction, forming a word line layer above the substrate via the first hole, the word line layer disposed in a second direction perpendicular to the first direction, forming a first portion of a nonvolatile memory material on peripheral sides of the word line layer via the first hole, forming a second hole in the second sacrificial material, forming a second portion of the nonvolatile memory material on a sidewall of the second hole, forming a local bit line in the second hole, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line layer.