公开(公告)号：US10453854B2

公开(公告)日：2019-10-22

申请号：US15813625

申请日：2017-11-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoshihiro Kanno ,  Senaka Krishna Kanakamedala ,  Raghuveer S. Makala ,  Yanli Zhang ,  Jin Liu ,  Murshed Chowdhury

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11565 ,  H01L23/522 ,  H01L27/11519 ,  H01L27/1157

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Memory stack structures are located in a memory array region, each of which includes a memory film and a vertical semiconductor channel. Contact via structures located in the terrace region and contact a respective one of the electrically conductive layers. Each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within a terrace region. The greater thickness of the contact portion prevents an etch-through during formation of contact via cavities for forming the contact via structures.

公开(公告)号：US10461163B2

公开(公告)日：2019-10-29

申请号：US15813579

申请日：2017-11-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Senaka Krishna Kanakamedala ,  Yoshihiro Kanno ,  Raghuveer S. Makala ,  Yanli Zhang ,  Jin Liu ,  Murshed Chowdhury ,  Yao-Sheng Lee

IPC: H01L29/423 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/49 ,  H01L29/66 ,  H01L23/522

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Memory stack structures are located in a memory array region, each of which includes a memory film and a vertical semiconductor channel. Contact via structures located in the terrace region and contact a respective one of the electrically conductive layers. Each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within a terrace region. The greater thickness of the contact portion prevents an etch-through during formation of contact via cavities for forming the contact via structures.