Invention Grant
- Patent Title: Three-dimensional memory device with thickened word lines in terrace region
-
Application No.: US15813625Application Date: 2017-11-15
-
Publication No.: US10453854B2Publication Date: 2019-10-22
- Inventor: Yoshihiro Kanno , Senaka Krishna Kanakamedala , Raghuveer S. Makala , Yanli Zhang , Jin Liu , Murshed Chowdhury
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L27/11524 ; H01L27/11565 ; H01L23/522 ; H01L27/11519 ; H01L27/1157

Abstract:
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Memory stack structures are located in a memory array region, each of which includes a memory film and a vertical semiconductor channel. Contact via structures located in the terrace region and contact a respective one of the electrically conductive layers. Each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within a terrace region. The greater thickness of the contact portion prevents an etch-through during formation of contact via cavities for forming the contact via structures.
Public/Granted literature
- US20190148392A1 THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRACE REGION AND METHOD OF MAKING THEREOF Public/Granted day:2019-05-16
Information query
IPC分类: