公开(公告)号：US20190006215A1

公开(公告)日：2019-01-03

申请号：US16017177

申请日：2018-06-25

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takayuki AOYAMA ,  Shinichi IKEDA ,  Akitsugu UEDA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01L21/268 ,  H01L21/324 ,  H05B3/00

Abstract: A semiconductor wafer transport mode of a heat treatment apparatus is switchable between two modes of a “high throughput mode” and a “low oxygen concentration mode” as appropriate. In the “low oxygen concentration mode”, a first cooling chamber is used only as a path for transferring the semiconductor wafer, and a second cooling chamber is used only as a dedicated cooling unit for cooling the semiconductor wafer subjected to flash heating. On the other hand, in the “high throughput mode”, both of the first cooling chamber and the second cooling chamber are used as paths for transferring the semiconductor wafer, and as the cooling units, too.

公开(公告)号：US20190267261A1

公开(公告)日：2019-08-29

申请号：US16221112

申请日：2018-12-14

Applicant: SCREEN HOLDINGS CO., LTD.

Inventor： Katsuichi Akiyoshi ,  Mao OMORI ,  Shinichi IKEDA

IPC: H01L21/67

Abstract: A semiconductor wafer is preheated by halogen lamps; thereafter, the semiconductor wafer is heated by irradiation with flash of light from flash lamps. A radiation thermometer measures the temperature of the back surface of the semiconductor wafer at predetermined sampling intervals and acquires a plurality of temperature measurement values. Of the plurality of temperature measurement values, a temperature integrated value is calculated by integrating a set number of the temperature measurement values acquired from the start point of integration after a start time of irradiation of the flash light. When the calculated temperature integrated value falls out of the range between the upper limit value and the lower limit value, the semiconductor wafer is determined to be broken at the time of flash light irradiation.

公开(公告)号：US20200266084A1

公开(公告)日：2020-08-20

申请号：US16855886

申请日：2020-04-22

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takayuki AOYAMA ,  Shinichi IKEDA ,  Akitsugu UEDA

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/00 ,  H01L21/324 ,  H01L21/268 ,  H01L21/677

Abstract: A semiconductor wafer transport mode of a heat treatment apparatus is switchable between two modes of a “high throughput mode” and a “low oxygen concentration mode” as appropriate. In the “low oxygen concentration mode”, a first cooling chamber is used only as a path for transferring the semiconductor wafer, and a second cooling chamber is used only as a dedicated cooling unit for cooling the semiconductor wafer subjected to flash heating. On the other hand, in the “high throughput mode”, both of the first cooling chamber and the second cooling chamber are used as paths for transferring the semiconductor wafer, and as the cooling units, too.