LIGHT IRRADIATION TYPE HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS

    公开(公告)号:US20190267261A1

    公开(公告)日:2019-08-29

    申请号:US16221112

    申请日:2018-12-14

    Abstract: A semiconductor wafer is preheated by halogen lamps; thereafter, the semiconductor wafer is heated by irradiation with flash of light from flash lamps. A radiation thermometer measures the temperature of the back surface of the semiconductor wafer at predetermined sampling intervals and acquires a plurality of temperature measurement values. Of the plurality of temperature measurement values, a temperature integrated value is calculated by integrating a set number of the temperature measurement values acquired from the start point of integration after a start time of irradiation of the flash light. When the calculated temperature integrated value falls out of the range between the upper limit value and the lower limit value, the semiconductor wafer is determined to be broken at the time of flash light irradiation.

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