公开(公告)号：US20130187115A1

公开(公告)日：2013-07-25

申请号：US13785516

申请日：2013-03-05

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Haiwen Xi ,  Ming Sun ,  Dexin Wang ,  Shuiyuan Huang ,  Michael Tang ,  Song S. Xue

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1675

Abstract: Programmable metallization memory cells include an electrochemically active electrode, an inert electrode and an internal layer between the electrochemically active electrode and the inert electrode. The internal layer having a fast ion conductor material and an apertured layer having a plurality of apertures defined by an electrically insulating material. Each aperture defines at least a portion of a column of fast ion conductor material having superionic clusters.

Abstract translation: 可编程金属化存储单元包括电化学活性电极，惰性电极和电化学活性电极和惰性电极之间的内层。 所述内层具有快速离子导体材料和多孔层，其具有由电绝缘材料限定的多个孔。 每个孔限定具有超离子簇的快速离子导体材料的列的至少一部分。