Method Of Forming Conductive Pattern
    3.
    发明公开

    公开(公告)号:US20230240016A1

    公开(公告)日:2023-07-27

    申请号:US18157172

    申请日:2023-01-20

    CPC classification number: H05K3/125 H05K1/097 H05K1/0306 H05K3/38

    Abstract: A method of forming a conductive pattern includes forming a conductive pattern by ejecting a liquid-state material containing conductive fine particles onto a porous base material, wherein the conductive fine particles have an average particle size of from 1 nm to 200 nm, and the porous base material is formed with a plurality of cavities and includes communication holes through which the plurality of cavities are in communication, an average diameter of the communication holes being less than or equal to the average particle size of the conductive fine particles.

Patent Agency Ranking