公开(公告)号：US20160146906A1

公开(公告)日：2016-05-26

申请号：US14943493

申请日：2015-11-17

Applicant: SEIKO INSTRUMENTS INC.

Inventor： Satoshi SUZUKI ,  Mika EBIHARA ,  Takaaki HIOKA

IPC: G01R33/07

CPC classification number: G01R33/077 ,  G01R33/07 ,  G01R33/072 ,  G01R33/075 ,  H01L43/06 ,  H01L43/065 ,  H01L43/12 ,  H01L43/14

Abstract: Provided is a highly sensitive vertical Hall element without increasing a chip area. In the vertical Hall element, trenches each filled with an insulating film are formed between a first current supply end and voltage output ends, respectively, which enables the restriction of current flow into the voltage output ends to increase the ratio of a current component perpendicular to a substrate surface, resulting in enhanced sensitivity.

Abstract translation: 提供高灵敏度的垂直霍尔元件，而不增加芯片面积。 在垂直霍尔元件中，分别在第一电流供给端和电压输出端之间形成各自填充有绝缘膜的沟槽，其能够限制电流流入电压输出端，以增加垂直于 衬底表面，导致增强的灵敏度。

公开(公告)号：US20160209480A1

公开(公告)日：2016-07-21

申请号：US14997710

申请日：2016-01-18

Applicant: SEIKO INSTRUMENTS INC.

Inventor： Takaaki HIOKA ,  Mika EBIHARA

IPC: G01R33/07

CPC classification number: G01R33/077 ,  G01R33/075

Abstract: Provided is a Hall element integrated on a single substrate capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes: a P-type semiconductor substrate layer (100) formed of P-type silicon; a vertical magnetic field detection N-type doped region (110) formed on the P-type semiconductor substrate layer; and eight horizontal magnetic field detection N-type doped regions (120, 121) formed so as to surround the vertical magnetic field detection N-type doped region.

Abstract translation: 提供一种集成在单个基板上的霍尔元件，其能够利用配置为开关旋转电流并且能够同时检测水平方向磁场和垂直方向磁场的旋转开关来抵消偏移电压。 霍尔元件具有四重旋转轴，包括：由P型硅形成的P型半导体衬底层（100）; 形成在P型半导体衬底层上的垂直磁场检测N型掺杂区域（110）; 和8个水平磁场检测N型掺杂区域（120,121），其形成为围绕垂直磁场检测N型掺杂区域。