公开(公告)号：US20160005744A1

公开(公告)日：2016-01-07

申请号：US14769048

申请日：2014-01-22

Applicant: SEIKO INSTRUMENTS INC.

Inventor： Tetsuo SOMEYA

IPC: H01L27/115 ,  H01L27/144

CPC classification number: H01L27/115 ,  H01L23/3192 ,  H01L23/53295 ,  H01L27/1443 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to provide an ultraviolet-erasable nonvolatile semiconductor device that has a high water resistance and is capable of erasing data by ultraviolet rays, a protective film includes a silicon nitride film (12) and a silicon oxynitride film (13). The silicon nitride film (12) and the silicon oxynitride film (13) cooperate to prevent moisture from penetrating into the ultraviolet-erasable nonvolatile semiconductor device. The silicon nitride film 12 has such a thickness with which a time for erasing data in a nonvolatile semiconductor storage element (17) through irradiation of the ultraviolet rays is not increased.

Abstract translation: 为了提供具有高耐水性且能够通过紫外线擦除数据的紫外线可擦除的非易失性半导体器件，保护膜包括氮化硅膜（12）和氧氮化硅膜（13）。 氮化硅膜（12）和氮氧化硅膜（13）配合以防止水分渗透到可紫外线可擦除的非易失性半导体器件中。 氮化硅膜12具有通过紫外线的照射而擦除非易失性半导体存储元件（17）中的数据的时间的厚度。