公开(公告)号：US20240412951A1

公开(公告)日：2024-12-12

申请号：US18809588

申请日：2024-08-20

Applicant: SEMES CO., LTD.

Inventor： DONG-HUN KIM ,  WAN JAE PARK ,  SEONG GIL LEE ,  JI-HWAN LEE ,  YOUNGJE UM ,  DONG SUB OH ,  MYOUNGSUB NOH

IPC: H01J37/32

Abstract: An apparatus for treating a substrate includes a process chamber having an inner space, a support unit supporting a substrate in the inner space, a processing gas supply unit for supplying a processing gas to the inner space, and a plasma source that excites the processing gas in a plasma state in the inner space. The processing gas supply unit includes a heater that heats the processing gas.

公开(公告)号：US20210151333A1

公开(公告)日：2021-05-20

申请号：US16952071

申请日：2020-11-18

Applicant: SEMES CO., LTD.

Inventor： JI-HWAN LEE ,  SEONG GIL LEE ,  DONG SUB OH ,  MYOUNGSUB NOH ,  DONG-HUN KIM ,  WAN JAE PARK

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.

公开(公告)号：US20210287877A1

公开(公告)日：2021-09-16

申请号：US17202244

申请日：2021-03-15

Applicant: SEMES CO., LTD.

Inventor： DONG-HUN KIM ,  WAN JAE PARK ,  SEONG GIL LEE ,  JI-HWAN LEE ,  YOUNGJE UM ,  DONG SUB OH ,  MYOUNGSUB NOH

IPC: H01J37/32

Abstract: An apparatus for treating a substrate includes a process chamber having an inner space, a support unit supporting a substrate in the inner space, a processing gas supply unit for supplying a processing gas to the inner space, and a plasma source that excites the processing gas in a plasma state in the inner space. The processing gas supply unit includes a heater that heats the processing gas.