公开(公告)号：US20220139673A1

公开(公告)日：2022-05-05

申请号：US17518480

申请日：2021-11-03

Applicant: SEMES CO., LTD.

Inventor： YOUNG KUK KIM ,  SHANT ARAKELYAN ,  JAE HONG MIN ,  TAE HOON JO ,  JA MYUNG GU

IPC: H01J37/32

Abstract: A substrate treating apparatus includes a processing chamber having an inner processing space, a support unit supporting a substrate in the processing space, a gas supply unit supplying processing gas into the treatment space, and a RF power for supplying an RF signal to excite the processing gas into a plasma state. The support unit includes an edge ring surrounding the substrate, a coupling ring disposed under the edge ring and including an electrode therein, and a cable connected to the electrode. The end of the cable is grounded.