公开(公告)号：US20220139673A1

公开(公告)日：2022-05-05

申请号：US17518480

申请日：2021-11-03

Applicant: SEMES CO., LTD.

Inventor： YOUNG KUK KIM ,  SHANT ARAKELYAN ,  JAE HONG MIN ,  TAE HOON JO ,  JA MYUNG GU

IPC: H01J37/32

Abstract: A substrate treating apparatus includes a processing chamber having an inner processing space, a support unit supporting a substrate in the processing space, a gas supply unit supplying processing gas into the treatment space, and a RF power for supplying an RF signal to excite the processing gas into a plasma state. The support unit includes an edge ring surrounding the substrate, a coupling ring disposed under the edge ring and including an electrode therein, and a cable connected to the electrode. The end of the cable is grounded.

公开(公告)号：US20220157565A1

公开(公告)日：2022-05-19

申请号：US17527128

申请日：2021-11-15

Applicant: SEMES CO., LTD.

Inventor： YOUNG KUK KIM ,  TAE HOON JO ,  GOON HO PARK ,  JA MYUNG GU

IPC: H01J37/32

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus includes: an RF power supply; a process chamber which performs plasma processing by using power applied from the RF power supply; and an impedance matching unit which is disposed between the RF power supply and the process chamber and performs matching, in which the RF power supply includes a first sensor measuring impedance in a direction of the process chamber and the impedance matching unit, and the impedance matching unit performs impedance matching by reflecting impedance measured in the RF power supply through the first sensor.