公开(公告)号：US20250166977A1

公开(公告)日：2025-05-22

申请号：US19033324

申请日：2025-01-21

Applicant: SEMES CO., LTD.

Inventor： HYOUNGKYU SON ,  JONG-HWAN AN ,  JAE HYUN CHO ,  MIN KEUN BAE ,  DONG SUK KIM ,  HYEON GYU KIM ,  OGSEN GALSTYAN ,  WON SEOK LEE ,  SUNG JE KIM

IPC: H01J37/32 ,  H01L21/3065

Abstract: The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

公开(公告)号：US20220208513A1

公开(公告)日：2022-06-30

申请号：US17563252

申请日：2021-12-28

Applicant: SEMES CO., LTD.

Inventor： OGSEN GALSTYAN ,  HYUK JIN LEE ,  YOUNG-BIN KIM ,  YOUN GUN BONG ,  JONG-HWAN AN

IPC: H01J37/32

Abstract: A substrate treating apparatus includes a chamber having a treating space therein, a substrate support unit supporting a substrate in the treating space, a gas supply unit supplying a gas into the treating space, and a plasma generation unit exciting the gas within the treating space to generate plasma. The plasma generation unit includes an RF power supplying an RF signal, and a first antenna and a second antenna being supplied with the RF signal to generate the plasma from the gas supplied inside the treating space. The first antenna is disposed at an inside of the second antenna. The coils included in the second antenna are stacked on each other at a second height, and coils included in the first antenna are stacked on each other at a first height, the second height being greater than the first height.

公开(公告)号：US20210366695A1

公开(公告)日：2021-11-25

申请号：US17323250

申请日：2021-05-18

Applicant: SEMES CO., LTD.

Inventor： OGSEN GALSTYAN ,  JUNPYO LEE ,  GOON HO PARK ,  HYUN-JIN KIM ,  YOUNG-BIN KIM ,  JONG-HWAN AN

IPC: H01J37/32

Abstract: Disclosed is a substrate treating apparatus, which includes a chamber having a space for treating a substrate in an interior thereof, a substrate support assembly including a support plate situated in the chamber and which supports the substrate, a gas supply unit which supplies a gas into the interior of the chamber, a plasma generating unit which excites the gas in in the interior of the chamber into a plasma state, and a substrate temperature control unit which controls a temperature of the substrate, and the substrate temperature control unit includes a plurality of heaters installed in different areas of the support plate, a power supply part which supplies electric power to the plurality of heaters, a ferrite core which interrupts a low-frequency signal introduced to the power supply part, and a plurality of air cores which interrupts a high-frequency signal introduced into the power supply part.