公开(公告)号：US12276025B2

公开(公告)日：2025-04-15

申请号：US18092169

申请日：2022-12-30

Applicant: SEMES CO., LTD.

Inventor： Kwang Ryul Kim ,  Yun Sang Kim ,  Jin Hee Hong

IPC: C23C16/46 ,  C23C16/455 ,  H01J37/32

Abstract: A substrate processing apparatus includes a processing chamber having a processing space in which a substrate is plasma-processed, and having a transparent window; a gas flow unit supplying and discharging process gas to the processing chamber; and a laser irradiator irradiating a laser for heating the substrate to be selectively atomic layer-processed for each of a plurality of thin films formed on the substrate through the transparent window from an external space of the processing chamber.