公开(公告)号：US12276025B2

公开(公告)日：2025-04-15

申请号：US18092169

申请日：2022-12-30

Applicant: SEMES CO., LTD.

Inventor： Kwang Ryul Kim ,  Yun Sang Kim ,  Jin Hee Hong

IPC: C23C16/46 ,  C23C16/455 ,  H01J37/32

Abstract: A substrate processing apparatus includes a processing chamber having a processing space in which a substrate is plasma-processed, and having a transparent window; a gas flow unit supplying and discharging process gas to the processing chamber; and a laser irradiator irradiating a laser for heating the substrate to be selectively atomic layer-processed for each of a plurality of thin films formed on the substrate through the transparent window from an external space of the processing chamber.

公开(公告)号：US20180337070A1

公开(公告)日：2018-11-22

申请号：US15979956

申请日：2018-05-15

Applicant: SEMES CO., LTD.

Inventor： Byungsun Bang ,  Buyoung Jung ,  Jungbong Choi ,  Bong Joo Kim ,  Youngil Lee ,  Gil Hun Song ,  Gui Su Park ,  Kwang Ryul Kim ,  Kwang-Seop Lee ,  Jin Tack Yu

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04 ,  B08B3/08 ,  B08B7/04 ,  C03C23/00 ,  B23K26/402

CPC classification number: H01L21/67028 ,  B08B3/041 ,  B08B3/08 ,  B08B7/0042 ,  B08B7/04 ,  B23K26/402 ,  C03C23/0025 ,  H01L21/0206 ,  H01L21/0217

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes removing a portion of the thin film by irradiating a laser to the substrate, and after the removing of the portion of the thin film, removing the remaining portion of the thin film by supplying a chemical to the substrate.